Transistor IGBT IHW30N160R2 TO-247 1600V/30A/312W

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Código: 028IHW30N160 Categoría:

Descripción

TRANSISTOR IGBT IHW30N160R2, MARKING H30R1602, TO-247 1600V/30A/312W, FABRICANTE INFINEON


TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode

Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
  – very tight parameter distribution
  – high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
  for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Inductive Cooking
• Soft Switching Applications

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